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An intelligent power transistor module based on MOSFETS with a built-in 1M9D control driver is designed to work in special equipment as a power element for switching current in converter devices of va..
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The DR1180P-B1 driver is a single–channel driver of high-power field-controlled transistors (MOSFET or IGBT), designed for dependent galvanically isolated control of one high-power transistor with a m..
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The DR1270P-BF1 driver is a single–channel driver of high-power IGBT and MOSFET field-controlled transistors (IGBT or MOSFET), designed for galvanically isolated control of a single powerful transisto..
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The DR1270P-BF1 driver is a single–channel driver of high-power IGBT and MOSFET field-controlled transistors (IGBT or MOSFET), designed for galvanically isolated control of a single powerful transisto..
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The DR1270P-BF1 driver is a single–channel driver of high-power IGBT and MOSFET field-controlled transistors (IGBT or MOSFET), designed for galvanically isolated control of a single powerful transisto..
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The DR1270P-BF1 driver is a single–channel driver of high-power IGBT and MOSFET field-controlled transistors (IGBT or MOSFET), designed for galvanically isolated control of a single powerful transisto..
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The DR2162P-B1 driver is a semi–bridge driver for high-power field-controlled transistors (MOSFET or IGBT), designed for dependent galvanically isolated control of two high-power transistors with a ma..
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The DR2180P-B3 driver is a two–channel driver of high-power field-controlled transistors (MOSFET or IGBT), designed for dependent galvanically isolated control of two high-power transistors with ..
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The DR2180P-B4 driver is a two–channel driver of high-power field-controlled transistors (MOSFET or IGBT), designed for dependent galvanically isolated control of two high-power transistors with ..
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The DR2180P-B5 driver is a two–channel driver of high-power field-controlled transistors (MOSFET or IGBT), designed for dependent galvanically isolated control of two high-power transistors with ..
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The DR2180P-B6 driver (hereinafter referred to as the driver) is a two–channel driver of high–power field-controlled transistors (MOSFET or IGBT), designed for dependent galvanically isolated control ..
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The DR2180P-B7 driver (hereinafter referred to as the driver) is a two–channel driver of high–power field-controlled transistors (MOSFET or IGBT), designed for dependent galvanically isolated con..
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The DR2180P-BF1 driver is a two–channel driver of high-power field-controlled transistors (MOSFET or IGBT), designed for dependent galvanically isolated control of two high-power transistors with a ma..
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The DR2180P-BF1 driver is a two–channel driver of high-power field-controlled transistors (MOSFET or IGBT), designed for dependent galvanically isolated control of two high-power transistors with a ma..
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The DR2180P-BF5 driver is a two–channel driver of high-power field-controlled transistors (MOSFET or IGBT), designed for dependent galvanically isolated control of two high-power transistors with a ma..
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The IGBT and silicon carbide transistor driver DR2200P-B1 of high-power transistors with dependent control is designed for galvanically isolated control of two high-power silicon carbide transist..
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The IGBT and silicon carbide transistor driver DR2200P-B2 of high-power transistors with dependent control is designed for galvanically isolated control of two high-power silicon carbide transistors (..
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The DR4100P-B1 driver is a four–channel driver of high-power field-controlled transistors (MOSFET or IGBT), designed for galvanically isolated control of four high-power transistors (two half-bridges)..
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The DR4100P-B5 driver is a four–channel driver of high-power field-controlled transistors (MOSFET or IGBT), designed for galvanically isolated control of four high-power transistors (two half bridges)..
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The DR4100P-B6 driver is a four–channel driver of high-power field-controlled transistors (MOSFET or IGBT), designed for galvanically isolated control of four high-power transistors (two half bridges)..
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The DR6100P-B1 driver is a six–channel driver of high-power field-controlled transistors (MOSFET or IGBT), designed for galvanically isolated control of six high-power transistors (three half-bridges)..
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The DR6100P-B2 driver is a six–channel driver of high-power field-controlled transistors (MOSFET or IGBT), designed for galvanically isolated control of six high-power transistors (three half-bridges)..
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The DR6100P-B3 driver is a six–channel driver of high-power field-controlled transistors (MOSFET or IGBT), designed for galvanically isolated control of six high-power transistors (three half-bridges)..
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The DR6100P-B6 driver is a six–channel driver of high-power field-controlled transistors (MOSFET or IGBT), designed for galvanically isolated control of six high-power transistors (three half-bridges)..
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